| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,099 pcs
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2099 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
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The Toshiba TPC8018-H is a Silicon N-Channel MOS Type Field Effect Transistor, part of the Ultra-High-Speed U-MOSIII series. It is designed for high-speed and high-efficiency DC/DC converter applications, as well as notebook PC and portable equipment applications.
Key electrical characteristics include a drain-source voltage of 30V, a continuous drain current of 18A, and a pulsed drain current of 72A. The transistor exhibits a low drain-source ON-resistance of 3.5 mΩ (typ.) and a small gate charge of 12 nC (typ.). It also features a high forward transfer admittance of 50 S (typ.) and a low leakage current of 10 µA (max) at 30V drain-source voltage.
The TPC8018-H operates with an enhancement mode and has a threshold voltage ranging from 1.1 to 2.3V. The device has a maximum channel temperature of 150°C and a storage temperature range of -55 to 150°C.
Packaged in a small and thin SOP (2-6J1B) surface mount package, the TPC8018-H is suitable for applications requiring a small footprint. Its thermal resistance from channel to ambient is 65.8 °C/W under specific mounting conditions (Note 2a).
30 V.
SOP (surface-mount).
-55°C to 150°C.
18 A (DC).
3.5 mΩ typical, with a maximum of 4.6 mΩ.
12 nC typical.
1.1 V to 2.3 V (at VDS = 10 V, ID = 1 mA).