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TPC8018-H. The Toshiba TPC8018-H is a Silicon N-Channel MOS Type Field Effect Transistor designed for high-speed switching applications. It offers a low drain-source ON-resistance and small gate charge.
Mfr Part #:

TPC8018-H.

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TPC8018-H is a Silicon N-Channel MOS Type Field Effect Transistor designed for high-speed switching applications. It offers a low drain-source ON-resistance and small gate charge.
✓ Total Stock: 53,735 pcs

TPC8018-H. Available from 1 distributor

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✓ Non-Authorised
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Optech Co.,Limited ✓
Non-Authorised Inventory information
53,735 pcs
On Request
53735 pcs On Request 1 On Request On Request 06+Q1 On Request On Request
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TPC8018-H. Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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TPC8018-H. Description

Short technical summary and product information.

The Toshiba TPC8018-H is a Silicon N-Channel MOS Type Field Effect Transistor, part of the U-MOSIII series, designed for high-speed and high-efficiency DC/DC converter applications, notebook PCs, and portable equipment.

 

Key electrical specifications include a drain-source voltage of 30V, a continuous drain current of 18A, and a pulsed drain current of 72A. It features a low drain-source ON-resistance of 3.5 mΩ (typ.) and a small gate charge of 12 nC (typ.). The threshold voltage ranges from 1.1 to 2.3V.

 

Thermal characteristics include a maximum channel temperature of 150°C and thermal resistance values of 65.8 °C/W and 125 °C/W depending on the mounting board configuration. The device operates within a storage temperature range of -55 to 150°C.

 

Packaged in an SOP surface mount package, the TPC8018-H is suitable for compact designs. Its small footprint and high-speed switching capabilities make it ideal for power management in portable electronic devices.

TPC8018-H. Quick Information

Product Type: Field Effect Transistor
Series: U-MOSIII
Canonical Name: Toshiba TPC8018-H Silicon N-Channel MOS Type Field Effect Transistor
Subcategory: N-Channel

TPC8018-H. Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TPC8018-H. Features

  • Silicon N-Channel MOS Type Field Effect Transistor
  • High-speed switching capability
  • Low drain-source ON-resistance
  • Small gate charge
  • SOP surface mount package

TPC8018-H. Applications

  • Ideal for DC-DC converter circuits.
  • Used in load switching applications.
  • Designed for battery protection modules.
  • Suitable for power management in portable devices.

TPC8018-H. FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the TPC8018-H?

The maximum drain-source voltage is 30V.

What is the continuous drain current rating?

The continuous drain current is 18A DC.

What is the typical on-resistance?

The typical drain-source on-resistance is 3.5mΩ.

What is the package type?

The device is in a SOP (Small Outline Package) with surface mount mounting.

What is the operating temperature range?

The maximum channel temperature is 150°C and the storage temperature range is -55°C to 150°C.

What is the gate charge of the TPC8018-H?

The typical gate charge is 12nC.

What is the maximum avalanche energy capability?

The single-pulse avalanche energy is 210mJ (at VDD=24V, Tch=25°C, L=0.5mH).

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