| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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226,000 pcs
|
226000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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70,000 pcs
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70000 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request | |
|
11,520 pcs
|
11520 pcs | On Request | 1 | On Request | On Request | 1217+05+ | On Request | On Request | |
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5,767 pcs
|
5767 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,732 pcs
|
1732 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request |
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| Manufacturer Name |
The TPC8014 is an N-Channel MOSFET manufactured by Toshiba, designed for general-purpose power switching and load management applications. It features a drain-source voltage rating of 30V and a continuous drain current of 11A, making it suitable for low-to-medium power circuits.
The device offers low typical on-resistance values ranging from 5.8mΩ to 7.8mΩ, which helps minimize conduction losses. The gate threshold voltage typically falls between 2.2V and 3V, allowing for logic-level drive compatibility. Input and output capacitances are characterized for switching performance.
An integrated body diode with a breakdown voltage of 60V provides additional protection in inductive load switching. The TPC8014 is commonly used in DC-DC converters, load switches, and power management systems where efficiency and compact design are important.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
11A.
Typical values range from 5.8mΩ to 7.8mΩ depending on conditions.
Typical values range from 2.2V to 3V.
Yes, it includes an integrated body diode with a breakdown voltage of 60V.