| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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452,000 pcs
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452000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba TPC8009 is an N-Channel MOSFET belonging to the U-MOSIII series, designed for high-speed and high-efficiency DC-DC converters, notebook PCs, and portable equipment applications. It features a low drain-source on-resistance of 8 mΩ typical at 10V and a small gate charge of 29 nC typical, enabling high-speed switching.
This MOSFET operates at a maximum drain-source voltage of 30V and a continuous drain current of 13A. Its small and thin SOP-8 package contributes to a small footprint, making it suitable for space-constrained designs. The device is designed for applications requiring efficient power conversion and fast response times.
Key electrical characteristics include a typical gate charge of 29 nC and a typical drain-source on-resistance of 8 mΩ. The TPC8009 is built using Toshiba's high-speed U-MOSIII technology, ensuring excellent performance in demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30V.
The typical drain-source on-resistance is 8 mΩ at 10V.
The typical gate charge is 29 nC.
The TPC8009 is supplied in an SOP-8 package.