| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,320 pcs
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2320 pcs | On Request | 1 | On Request | On Request | 08+ | On Request | On Request |
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The Toshiba TPC8005-H is an N-Channel Power MOSFET designed for high-speed switching applications. It offers a drain-source voltage rating of 30V and a maximum drain current of 11A. With a low on-resistance (RDS(ON)) of 0.027 ohms at a gate-source voltage of 10V and a typical gate charge of 20 nC, this MOSFET is optimized for high efficiency.
This component is suitable for use in DC-DC converters, lithium-ion battery applications, portable equipment, and notebook PCs. Its small and thin package contributes to a compact design. The high-speed switching capability is noted as being 60% faster compared to previous types.
The MOSFET is housed in an 8-pin package, identified as 2-6J1A. Its silicon construction and N-channel enhancement mode make it a versatile choice for power management circuits.
The drain-source voltage for the TPC8005-H is 30V.
The maximum drain current for the TPC8005-H is 11A.
The RDS(ON) for the TPC8005-H is 0.027 ohms.
The typical gate charge for the TPC8005-H is 20 nC.
The TPC8005-H is an N-Channel Power MOSFET.
The TPC8005-H is in an 8-pin package, type 2-6J1A.