| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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68,285 pcs
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68285 pcs | On Request | 1 | On Request | On Request | 1109+ | On Request | On Request |
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The Toshiba TPC8005-H is an N-Channel Silicon MOSFET from the high-speed U-MOS series. It is designed for applications requiring high efficiency and speed, such as DC-DC converters, lithium-ion battery applications, portable equipment, and notebook PCs.
Key electrical characteristics include a drain-source voltage (VDS) of 30V, a continuous drain current (ID) of 11A, and a low on-resistance (RDS(ON)) of 0.027 ohm at a gate-source voltage (VGS) of 10V and drain current of 5.5A. The typical gate charge (Qg) is 20 nC, contributing to its high-speed switching capability, which is approximately 60% faster than previous types.
The MOSFET is housed in a small and thin package, indicated by the 2-6J1A case code, with 8 pins. Its small footprint makes it suitable for space-constrained designs. The component is classified as RoHS3 Compliant, with an MSL of 1 Unlimited and REACH Unaffected status.
The drain-source voltage is 30V.
The continuous drain current is 11A.
The typical on-resistance is 0.027 ohm.
The typical gate charge is 20 nC.
The TPC8005-H is an N-Channel Silicon MOSFET.
The TPC8005-H is in the 2-6J1A package with 8 pins.