| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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89,999 pcs
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89999 pcs | On Request | 1 | On Request | On Request | 08+ | On Request | On Request |
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The TPC8003 is a high-performance N-Channel Silicon MOS Type Field Effect Transistor manufactured by Texas Instruments, belonging to the U-MOSII series. This component is designed for efficiency in power management applications, particularly within portable electronics and notebook PCs.
Key electrical characteristics include a drain-source voltage rating of 30V and a continuous drain current capability of 13A. It boasts a low drain-source on-resistance (RDS(ON)) of typically 5.4 mOhm, which is crucial for minimizing power loss and improving efficiency. The transistor also features a high forward transfer admittance (|Yfs|) of 21 S (typical) and a low leakage current (IDSS) of a maximum of 10 uA at 30V drain-source voltage.
The TPC8003 is housed in a small and thin package, contributing to a small footprint in circuit designs. Its surface-mount capability makes it suitable for automated assembly processes. Applications include lithium-ion battery management systems, portable equipment power supplies, and notebook PC power circuits, where space and efficiency are paramount.
The typical drain-source on-resistance (RDS(ON)) for the TPC8003 is 5.4 mOhm.
The TPC8003 has a maximum drain-source voltage (VDS) of 30V.
The typical forward transfer admittance (|Yfs|) for the TPC8003 is 21 S.
The TPC8003 is supplied in a 2-6J1B package.
The TPC8003 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the TPC8003 is Level 1.