| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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70,000 pcs
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70000 pcs | On Request | 1 | On Request | On Request | 12PBF | On Request | On Request |
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The Toshiba TPC6130 is a general-purpose small signal P-Channel MOSFET. It is configured as a single element with a built-in diode and operates in enhancement mode.
Key electrical specifications include a minimum breakdown voltage of 20V and a maximum drain current (ID) of 2.8A. The maximum drain-source on-resistance is 0.164 Ohms. The FET technology used is Metal-Oxide Semiconductor.
This MOSFET is housed in a thin, 6-pin small outline package suitable for surface mounting. The package body material is plastic/epoxy, and it features gull wing terminals. The configuration includes a built-in diode, making it suitable for various switching applications.
The minimum breakdown voltage for the TPC6130 is 20V.
The TPC6130 has a maximum drain current of 2.8A.
The maximum drain-source on-resistance for the TPC6130 is 0.164 Ohms.
The TPC6130 is a P-Channel MOSFET.
The TPC6130 is supplied in a thin, 6-pin small outline package.
Yes, the TPC6130 is configured with a built-in diode.