| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
723,200 pcs
|
723200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Technology |
The TPC6113TE85LFM from Toshiba is a P-Channel MOSFET belonging to the U-MOSVI series. It features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 5A at 25°C. The device has a maximum power dissipation of 700mW (Ta) and an operating temperature range up to 150°C (TJ).
With a low on-resistance of 55mOhm at 2.5A and 4.5V gate-source voltage, and a gate threshold voltage of 1.2V at 200µA, this MOSFET is suitable for various switching applications. It has a maximum gate-source voltage of ±12V and features a gate charge of 10nC at 5V and an input capacitance of 690pF at 10V.
The MOSFET is housed in a surface mount package, specifically SOT-23-6 Thin or TSOT-23-6, with the supplier device package designated as VS-6 (2.9x2.8). The product status is listed as Obsolete.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) for the TPC6113TE85LFM is 20V.
The continuous drain current (Id) for the TPC6113TE85LFM is 5A at 25°C (Ta).
The maximum on-resistance (Rds On) for the TPC6113TE85LFM is 55mOhm when measured at 2.5A drain current and 4.5V gate-source voltage.
The TPC6113TE85LFM can operate at temperatures up to 150°C (TJ).
The TPC6113TE85LFM is available in a surface mount package, specifically SOT-23-6 Thin or TSOT-23-6.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.