| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
22,000 pcs
|
22000 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Toshiba TPC6111(TE85L,F,M) is a P-Channel MOSFET designed for various electronic applications. It offers a drain-source voltage (Vdss) of 20V and a continuous drain current of 5.5A at ambient temperature. The MOSFET features a low on-resistance (Rds On) of 40mOhm at 2.8A and 4.5V gate-source voltage, with a gate charge (Qg) of 10nC at 5V.
The device operates within a temperature range of -150°C to 150°C (TJ) and has a maximum power dissipation of 700mW (Ta). It utilizes Metal Oxide Semiconductor technology.
Packaged in a SOT-23-6 Thin (TSOT-23-6) surface-mount configuration, this component is suitable for space-constrained designs. The VS-6 package measures 2.9x2.8mm. The gate-to-source voltage (Vgs) maximum is ±8V, and the gate threshold voltage (Vgs(th)) is 1V at 1mA.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 20V.
The continuous drain current is 5.5A at ambient temperature.
The Rds On (Max) is 40mOhm at 2.8A drain current and 4.5V gate-source voltage.
The operating temperature is 150°C (TJ).
It is supplied in a SOT-23-6 Thin, TSOT-23-6 package.
This MOSFET is surface mount.