| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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22,000 pcs
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22000 pcs | On Request | 1 | On Request | On Request | 1250+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present |
The Toshiba TPC6111(TE85L is a P-Channel MOSFET belonging to the U-MOSV series. It is designed for surface mount applications and comes in a SOT-23-6 Thin, TSOT-23-6 package, also known as VS-6.
Key electrical specifications include a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 5.5A at 25°C. The on-resistance (Rds On) is a maximum of 40mOhm at 2.8A and 4.5V gate-source voltage. The gate threshold voltage (Vgs(th)) is a maximum of 1V at 1mA. The device has a maximum gate charge (Qg) of 10nC at 5V and a maximum gate-source voltage (Vgs) of ±8V. Input capacitance (Ciss) is a maximum of 700pF at 10V.
Thermal characteristics include a maximum power dissipation of 700mW (Ta) and an operating junction temperature of 150°C. The MOSFET technology is Metal Oxide.
This component is suitable for applications requiring a P-Channel MOSFET with moderate voltage and current handling capabilities in a compact surface-mount package.
20V.
5.5A at 25°C.
40mOhm maximum at 2.8A, 4.5V.
Maximum junction temperature 150°C.
SOT-23-6 Thin, TSOT-23-6 surface mount package.
1V maximum at 1mA.
10nC maximum at 5V.