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31,000 pcs
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31000 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The TPC6109-H from VBsemi is a P-Channel, Silicon Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) utilizing Ultra-High-Speed U-MOSIII technology. This component is engineered for high-efficiency DC-DC converter applications, offering a compact solution due to its small and thin package.
Key electrical characteristics include a low drain-source ON-resistance (RDS(ON)) of 44 mΩ typical at 10V VDS, and a high forward transfer admittance (|Yfs|) of 8.0 S typical. It can handle a drain current (ID) of up to 5A and has a maximum drain-source voltage (VDS) of 30V. The leakage current (IDSS) is a maximum of 10 μA at 30V VDS.
This MOSFET is designed for applications requiring efficient power conversion. Its specifications make it suitable for use in portable devices and other systems where space and power efficiency are critical. The U-MOSIII technology contributes to its high-speed switching capabilities.
The typical drain-source ON-resistance is 44 mΩ at 10V VDS.
The maximum drain current is 5A.
The drain-source voltage rating is 30V.
The typical forward transconductance is 8 S.
The maximum leakage current is 10 μA at 30V VDS.