| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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60,000 pcs
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60000 pcs | On Request | 1 | On Request | On Request | 0729+(PB) | On Request | On Request |
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This Toshiba TPC6107(TE85L,F,M) is a P-Channel MOSFET with a drain-source voltage of 20V and a continuous drain current of 4.5A at ambient temperature. It offers a low on-resistance of 55mOhm at 2.2A and 4.5V gate-source voltage. The MOSFET operates at a maximum junction temperature of 150°C and has a power dissipation of 700mW.
Designed for surface mounting, this component comes in a SOT-23-6 Thin, TSOT-23-6 package, also known as VS-6. Its electrical characteristics include an input capacitance of 680pF at 10V and a gate charge of 9.8nC at 5V. The gate-to-source voltage has a maximum rating of ±12V, with a gate threshold voltage of 1.2V at 200µA.
This MOSFET is suitable for various electronic applications requiring efficient switching and power management. Its P-Channel configuration and specific electrical parameters make it a component for designs needing a negative channel enhancement mode transistor.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 20V.
The maximum continuous drain current is 4.5A at ambient temperature.
The package is SOT-23-6 Thin, TSOT-23-6, also known as supplier package VS-6 (2.9x2.8mm).
The maximum operating junction temperature is 150°C.
The on-resistance is 55mOhm maximum at Id=2.2A and Vgs=4.5V.
The gate threshold voltage is 1.2V maximum at Id=200µA.
The maximum power dissipation is 700mW at ambient temperature.