| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,970 pcs
|
4970 pcs | On Request | 1 | On Request | On Request | 2013 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Toshiba TPC6104(TE85L,F,M) is a P-Channel MOSFET designed for various electronic applications. It offers a maximum drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 5.5A at ambient temperature.
The MOSFET features a low on-resistance (Rds On) of 40mOhm at a gate-source voltage (Vgs) of 4.5V and a drain current (Id) of 2.8A. The gate threshold voltage (Vgs(th)) is a maximum of 1.2V at 200µA. Input capacitance (Ciss) is 1430pF at 10V, and gate charge (Qg) is 19nC at 5V.
With a maximum power dissipation of 700mW at ambient temperature, this device operates within a junction temperature range of -55°C to 150°C. It is suitable for surface mounting and comes in a VS-6 package, specifically SOT-23-6 Thin or TSOT-23-6.
The technology utilized is MOSFET (Metal Oxide), and it supports a maximum gate-source voltage of ±8V. The drive voltage for Rds On is specified between 1.8V and 4.5V.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain to source voltage (Vdss) is 20V.
The continuous drain current (Id) is 5.5A at ambient temperature.
The maximum on-resistance (Rds on) is 40 mOhm at 2.8A drain current and 4.5V gate-source voltage.
It is available in a SOT-23-6 Thin, TSOT-23-6 surface mount package.
The maximum operating junction temperature is 150°C.
The maximum gate threshold voltage (Vgs(th)) is 1.2V at 200µA drain current.
The maximum input capacitance (Ciss) is 1430 pF at 10V drain-source voltage.