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TPC6102 The Toshiba TPC6102 is a P-channel MOSFET designed for notebook PC and portable equipment applications. It features low ON-resistance and high forward transfer admittance.
Mfr Part #:

TPC6102

Available from 2 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TPC6102 is a P-channel MOSFET designed for notebook PC and portable equipment applications. It features low ON-resistance and high forward transfer admittance.
✓ Total Stock: 70,013 pcs

TPC6102 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
64,000 pcs
On Request
64000 pcs On Request 1 On Request On Request 04+05+ On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
6,013 pcs
On Request
6013 pcs On Request 1 On Request On Request 10+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

TPC6102 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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TPC6102 Description

Short technical summary and product information.

The Toshiba TPC6102 is a silicon P-channel MOS type field-effect transistor, utilizing the U-MOSII process. It is specifically designed for applications in notebook PCs and portable equipment.

 

Key electrical characteristics include a drain-source ON resistance (RDS(ON)) as low as 48 mΩ (typ.) at 10V VGS and 2.2A ID, and a high forward transfer admittance (|Yfs|) of 6 S (typ.). The device offers a low leakage current (IDSS) of -10 µA maximum at -30V VDS. The gate threshold voltage (Vth) ranges from -0.8V to -2.0V.

 

Maximum ratings include a drain-source voltage (VDSS) of 30V and a continuous drain current (ID) of 4.5A. The transistor can handle pulse drain currents up to 18A. It has a maximum channel temperature of 150 °C and a storage temperature range of -55 to 150 °C.

 

The TPC6102 is packaged in a VS-6 package. It is an electrostatically sensitive device and should be handled with caution.

TPC6102 Quick Information

Product Type: MOSFET
Canonical Name: TPC6102 P Channel MOSFET
Subcategory: P Channel

TPC6102 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TPC6102 Features

  • P-channel Silicon MOS Type MOSFET
  • Low drain-source ON resistance
  • High forward transfer admittance
  • Low leakage current
  • Suitable for notebook PC applications

TPC6102 Applications

  • Used in power management circuits.
  • Ideal for battery protection applications.
  • Suitable for load switching in portable devices.
  • DC-DC converter and regulator circuits.
  • Motor drive and solenoid control.

TPC6102 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the TPC6102?

The maximum drain-source voltage (VDSS) for the TPC6102 is 30 V.

What is the typical drain-source ON resistance of the TPC6102?

The typical drain-source ON resistance (RDS(ON)) is 48 mΩ at VGS = -10 V and ID = -2.2 A.

What is the continuous drain current for the TPC6102?

The continuous drain current (ID) for the TPC6102 is 4.5 A.

What is the typical forward transfer admittance of the TPC6102?

The typical forward transfer admittance (|Yfs|) of the TPC6102 is 3.0 S.

What is the maximum storage temperature for the TPC6102?

The storage temperature range for the TPC6102 is -55 to 150 °C.

What is the typical total gate charge for the TPC6102?

The typical total gate charge (Qg) for the TPC6102 is 11 nC.

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