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100,000 pcs
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100000 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request | |
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6,000 pcs
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6000 pcs | On Request | 1 | On Request | On Request | 0536+ | On Request | On Request |
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The Toshiba TPC6101 is a Silicon P Channel MOS Type Field Effect Transistor, suitable for applications in notebook PCs and portable equipment. It offers a low drain-source ON resistance of 48 mΩ (typ.) and high forward transfer admittance of 8.2 S (typ.). The device also features a low leakage current of -10 µA (max) at -20 V drain-source voltage.
Key electrical characteristics include a gate threshold voltage ranging from -0.5 V to -1.2 V. The transistor supports a continuous drain current of up to 4.5 A and a pulse drain current of 18 A. Power dissipation is rated at 2.2 W (Note 2a) and 0.7 W (Note 2b) for transient conditions.
With a package code of 2-3T1A and a weight of approximately 0.011 g, the TPC6101 is designed for surface mounting. Its thermal resistance from channel to ambient is 56.8 °C/W (Note 2a). This device is sensitive to electrostatic discharge and should be handled with care.
The typical drain-source ON resistance of the TPC6101 is 48 mΩ at VGS = -4.5 V and ID = -2.2 A.
The typical forward transfer admittance for the TPC6101 is 8.2 S, measured at VDS = -10 V and ID = -2.2 A.
The maximum continuous drain current for the TPC6101 is 4.5 A (Note 1).
The storage temperature range for the TPC6101 is -55 °C to 150 °C.
The RoHS status of the TPC6101 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the TPC6101 is 1 Unlimited.
The REACH status for the TPC6101 is REACH Unaffected.