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TPC6008-H The Toshiba TPC6008-H is an N-Channel MOSFET with a 30V drain-source voltage and a continuous drain current of 5.9A. It is designed for surface mounting.
Mfr Part #:

TPC6008-H

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TPC6008-H is an N-Channel MOSFET with a 30V drain-source voltage and a continuous drain current of 5.9A. It is designed for surface mounting.
✓ Total Stock: 46,000 pcs

TPC6008-H Available from 1 distributor

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✓ Non-Authorised
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Optech Co.,Limited ✓
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46,000 pcs
On Request
46000 pcs On Request 1 On Request On Request 19+ROHS On Request On Request
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TPC6008-H Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Drain to Source Voltage (Vdss)
FET Type
Failure Rate
Mounting Type
Operating Temperature
Package / Case
Technology
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TPC6008-H Description

Short technical summary and product information.

The Toshiba TPC6008-H is a single N-Channel MOSFET belonging to the U-MOSVI-H series. It features a drain-source breakdown voltage (Vdss) of 30V and can handle a continuous drain current (Id) of 5.9A at 25°C. The on-state resistance (Rds On) is a maximum of 60mOhm at 3A and 10V gate-source voltage.

 

This MOSFET utilizes Metal Oxide Semiconductor technology and is packaged in a VS-6 or SOT-23-6 Thin/TSOT-23-6 package, suitable for surface mounting. It has a maximum power dissipation of 700mW and an operating junction temperature of up to 150°C.

 

Key electrical parameters include a gate-source voltage (Vgs) maximum of ±20V and a gate source threshold voltage (Vgs(th)) of 2.3V at 100µA. Input capacitance (Ciss) is 300pF at 10V, and gate charge (Qg) is 4.8nC at 10V. The drive voltage range for specified Rds On is 4.5V to 10V.

TPC6008-H Quick Information

Product Type: MOSFET
Series: U-MOSVI-H
Canonical Name: Toshiba TPC6008-H N-Channel MOSFET
Subcategory: Transistors - FETs, MOSFETs - Single

TPC6008-H Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TPC6008-H Features

  • N-Channel MOSFET with 30V Vdss.
  • Continuous drain current of 5.9A.
  • Low on-state resistance of 60mOhm.
  • Surface mount SOT-23-6 package.
  • Maximum operating temperature of 150°C.

TPC6008-H Applications

  • Suitable for power switching applications.
  • Ideal for voltage regulation circuits.
  • Used in battery management systems.
  • Applicable in consumer electronics.
  • Component in portable devices.

TPC6008-H FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage (Vdss) of the TPC6008-H?

The drain-source voltage (Vdss) of the TPC6008-H is 30V.

What is the continuous drain current (Id) for the TPC6008-H?

The continuous drain current (Id) for the TPC6008-H is 5.9A at 25°C.

What is the maximum on-resistance (Rds On) of this MOSFET?

The maximum on-resistance (Rds On) is 60mOhm at 3A and 10V.

What type of package is the TPC6008-H in?

The TPC6008-H is available in VS-6 and SOT-23-6 Thin/TSOT-23-6 packages.

What is the operating temperature range for the TPC6008-H?

The operating temperature for the TPC6008-H is up to 150°C (Junction Temperature).

Is the TPC6008-H RoHS compliant?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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