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TPC6006-H The Toshiba TPC6006-H is an N-Channel MOSFET designed for high-speed switching applications. It features a low drain-source on-resistance and small gate charge.
Mfr Part #:

TPC6006-H

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TPC6006-H is an N-Channel MOSFET designed for high-speed switching applications. It features a low drain-source on-resistance and small gate charge.
✓ Total Stock: 28,578 pcs

TPC6006-H Available from 1 distributor

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Optech Co.,Limited ✓
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28,578 pcs
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28578 pcs On Request 1 On Request On Request 12+ On Request On Request
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TPC6006-H Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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TPC6006-H Description

Short technical summary and product information.

The Toshiba TPC6006-H is a Silicon N-Channel MOS Type Field Effect Transistor utilizing Ultra-High-Speed U-MOSIII technology. It is suitable for notebook PC and portable equipment applications.

 

Key electrical characteristics include a typical drain-source on-resistance of 59 mΩ at 10V gate-source voltage and 1.95A drain current. It also features a small gate charge of 2.4 nC (typical) and a high forward transfer admittance of 7 S (typical).

 

The transistor has a drain current rating of 3.9A and a drain-source voltage rating of 40V. Its small footprint and thin package make it ideal for space-constrained designs. The device is designed for high-speed switching applications.

TPC6006-H Quick Information

Product Type: N-Channel MOSFET
Canonical Name: Toshiba TPC6006-H N-Channel MOSFET
Subcategory: N-Channel

TPC6006-H Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TPC6006-H Features

  • N-Channel MOSFET with U-MOSIII technology.
  • Low drain-source on-resistance: 59 mΩ typical.
  • Small gate charge: 2.4 nC typical.
  • High forward transfer admittance: 7 S typical.
  • Suitable for portable equipment applications.

TPC6006-H Applications

  • Ideal for notebook PC applications.
  • Designed for portable equipment.
  • High-speed switching circuits.

TPC6006-H FAQs

7 frequently asked questions generated from this part’s specifications.
What is the typical drain-source on-resistance of the TPC6006-H?

The typical drain-source on-resistance is 59 mΩ.

What is the typical gate charge for the TPC6006-H?

The typical gate charge is 2.4 nC.

What is the typical forward transconductance of the TPC6006-H?

The typical forward transconductance is 7 S.

What is the drain current rating for the TPC6006-H?

The drain current rating is 3.9A.

What is the drain-source voltage for the TPC6006-H?

The drain-source voltage is 40V.

What type of channel does the TPC6006-H have?

The TPC6006-H has an N-Channel.

What technology is used in the TPC6006-H?

The TPC6006-H uses Ultra-High-Speed U-MOSIII technology.

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