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28,578 pcs
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28578 pcs | On Request | 1 | On Request | On Request | 05+PB | On Request | On Request |
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The Toshiba TPC6003 is a silicon N-Channel MOS Type (U-MOS III) field-effect transistor. It is engineered for applications in notebook PCs and portable equipment, offering a balance of performance characteristics.
Key electrical specifications include a drain-source breakdown voltage of 30 V and a low drain-source ON resistance of 19 mΩ (typ.) at VGS = 10 V, ID = 3 A. The device also boasts a high forward transfer admittance of 7 S (typ.) and a low leakage current of 10 µA (max) at VDS = 30 V. The gate threshold voltage (Vth) ranges from 1.3 to 2.5 V.
With a maximum channel temperature of 150 °C and a storage temperature range of -55 to 150 °C, the TPC6003 is designed for reliable operation. Thermal resistance from channel to ambient is 56.8 °C/W under specific conditions.
The transistor is an electrostatically sensitive device and requires careful handling. Its typical weight is 0.011 g.
The drain-source breakdown voltage of the TPC6003 is a minimum of 30 V.
The typical drain-source ON resistance for the TPC6003 is 19 mΩ.
The typical forward transfer admittance of the TPC6003 is 7 S.
The maximum drain leakage current for the TPC6003 is 10 µA.
The maximum channel temperature for the TPC6003 is 150 °C.
The typical input capacitance of the TPC6003 is 1250 pF.
The typical total gate charge for the TPC6003 is 25 nC.