| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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58,500 pcs
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58500 pcs | On Request | 1 | On Request | On Request | 19+ROHS | On Request | On Request |
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The Toshiba TPC6001 is a silicon N-channel Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) designed for applications such as notebook PCs and portable equipment. It features enhancement mode operation and utilizes Toshiba's U-MOSII technology.
Key electrical characteristics include a low drain-source on-resistance (RDS(ON)) of 22 mΩ (typ.) at a gate-source voltage of 10V and a drain current of 6A. It also boasts a high forward transfer admittance (|Yfs|) of 15 S (typ.). The maximum drain-source voltage is 20V, and the maximum leakage current (IDSS) at 20V is 10A. The gate threshold voltage (Vth) ranges from 0.5V to 1.2V under specific test conditions.
This MOSFET is suitable for power management switches and lithium-ion secondary battery applications. Its design focuses on providing efficient power switching in compact electronic devices.
20V.
U-MOSII.
22mOhm at Vgs=10V, Id=6A.
6A.
0.5V to 1.2V at Vds=10V, Id=200A.
15S typical.
10A.