| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
30,000 pcs
|
30000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
8,975 pcs
|
8975 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation | |
| Rds On (Max) @ Id, Vgs | |
| Technology | |
| Vgs(th) (Max) @ Id | |
| Voltage |
This P-Channel MOSFET from Microchip Technology, part number TP2540N3-G-P002, is designed for various electronic applications. It features a maximum drain-source voltage of 400V and a continuous drain current of 86mA.
The device operates with a gate-source threshold voltage of 2.4V at 1mA and has a maximum gate-source voltage rating of ±20V. Its drain-source on-resistance is specified as a maximum of 25 Ohms at 100mA and 10V. The input capacitance (Ciss) is a maximum of 125 pF at 25V.
Packaged in a through-hole TO-92-3 (TO-226AA) configuration, the TP2540N3-G-P002 is suitable for applications requiring this mounting style. It has a maximum power dissipation of 740mW (Ta) and an operating junction temperature range of -55°C to 150°C.
Compliance information indicates RoHS3 compliance, REACH unaffected status, and Moisture Sensitivity Level 1. The component is supplied in tape and reel packaging.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.49 | $0.49 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 400V.
The continuous drain current is 86mA.
The gate-source threshold voltage is a maximum of 2.4V at 1mA.
The operating junction temperature range is -55°C to 150°C.
It is supplied in a TO-92-3 (TO-226AA) through-hole package.