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TP2540N8-G The Microchip Technology TP2540N8-G is a P-Channel MOSFET designed for 400V applications. It features a surface mount TO-243AA package.
Mfr Part #:

TP2540N8-G

Available from 1 distributors
Mfr Name: Microchip Technology
Microchip Technology
The Microchip Technology TP2540N8-G is a P-Channel MOSFET designed for 400V applications. It features a surface mount TO-243AA package.
✓ Total Stock: 47 pcs
$ Price Range: $2.56

TP2540N8-G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
MW.FEP S.p.A. ✓
Non-Authorised Inventory information
47 pcs
On Request
47 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

TP2540N8-G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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TP2540N8-G Description

Short technical summary and product information.

The Microchip Technology TP2540N8-G is a P-Channel enhancement mode vertical DMOS FET. It offers a high drain-to-source voltage (Vdss) of 400V and a continuous drain current of 125mA at Tj.

 

This MOSFET has a maximum gate-source voltage (Vgs) of ±20V and a gate threshold voltage (Vgs(th)) of 2.4V at 1mA. The on-state resistance (Rds On) is a maximum of 25 Ohms at 100mA and 10V gate drive. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 1.6W (Ta).

 

Designed for surface mounting, the TP2540N8-G comes in a TO-243AA (SOT-89) package. Its electrical characteristics make it suitable for various power switching applications where a P-channel MOSFET is required.

TP2540N8-G Quick Information

Product Type: MOSFET
Canonical Name: TP2540N8-G P-Channel Enhancement Mode Vertical DMOS FET
Subcategory: P-Channel

TP2540N8-G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TP2540N8-G Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

TP2540N8-G Features

  • P-Channel enhancement mode MOSFET.
  • 400V drain-to-source voltage.
  • 125mA continuous drain current.
  • 25 Ohm maximum on-resistance.
  • TO-243AA surface mount package.

TP2540N8-G Applications

  • Used in high-side load switching circuits.
  • Suitable for power management in portable devices.
  • Ideal for negative-rail power supply designs.
  • Applicable in battery protection and charging circuits.

TP2540N8-G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the operating temperature range?

-55°C to 150°C (TJ)

What package is the TP2540N8-G available in?

TO-243AA (SOT-89) surface mount package.

What is the maximum drain-source voltage?

400 V.

What is the maximum continuous drain current?

125 mA (at Tj).

What is the on-state resistance?

25 Ohm maximum at Id = 100 mA, Vgs = 10 V.

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