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TP2510N8-G The Microchip TP2510N8-G is a P-Channel MOSFET with a 100V drain-source voltage and 480mA continuous current. It features a surface-mount SOT-89 package.
Mfr Part #:

TP2510N8-G

Available from 2 distributors
Mfr Name: Microchip Technology
Microchip Technology
The Microchip TP2510N8-G is a P-Channel MOSFET with a 100V drain-source voltage and 480mA continuous current. It features a surface-mount SOT-89 package.
✓ Total Stock: 123 pcs
$ Price Range: $2.56

TP2510N8-G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Speed Components Ltd ✓
Non-Authorised Inventory information
120 pcs
On Request
120 pcs On Request 1 On Request On Request MOUSER On Request On Request
MW.FEP S.p.A. ✓
Non-Authorised Inventory information
3 pcs
On Request
3 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

TP2510N8-G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Failure Rate
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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TP2510N8-G Description

Short technical summary and product information.

The Microchip TP2510N8-G is a P-Channel MOSFET designed for general-purpose applications. It offers a maximum drain-source voltage (Vds) of 100V and a continuous drain current of 480mA at Tj.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 3.5 Ohms at 750mA and 10V, a gate threshold voltage (Vgs(th)) of 2.4V at 1mA, and an input capacitance (Ciss) of 125 pF at 25V. The MOSFET operates within a temperature range of -55°C to 150°C (TJ).

 

This component is housed in a TO-243AA (SOT-89) package, suitable for surface mounting. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles. The maximum power dissipation is rated at 1.6W (Ta).

 

The TP2510N8-G is specified with RoHS3 compliance and an MSL of 1.

TP2510N8-G Quick Information

Product Type: MOSFET
Series: TP2510
Canonical Name: Microchip TP2510N8-G P-Channel MOSFET
Subcategory: P-Channel

TP2510N8-G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TP2510N8-G Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

TP2510N8-G Features

  • P-Channel MOSFET with 100V Vds.
  • Continuous drain current is 480mA.
  • Low Rds On of 3.5 Ohm.
  • Surface mount SOT-89 package.
  • Wide operating temperature range.

TP2510N8-G Applications

  • High-side load switching applications.
  • Power management in portable devices.
  • Battery protection and charging circuits.
  • General purpose switching and logic level conversion.

TP2510N8-G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the TP2510N8-G?

The maximum drain-source voltage (Vds) for the TP2510N8-G is 100V.

What type of MOSFET is the TP2510N8-G?

The TP2510N8-G is a P-Channel MOSFET.

What is the maximum on-resistance of the TP2510N8-G?

The maximum on-resistance (Rds On) is 3.5 Ohms at 750mA drain current and 10V gate-source voltage.

What is the continuous drain current for the TP2510N8-G?

The continuous drain current is 480mA at Tj.

What is the package type for the TP2510N8-G?

The TP2510N8-G is supplied in a TO-243AA (SOT-89) package.

What is the operating temperature range of the TP2510N8-G?

The operating temperature range is -55°C to 150°C.

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