| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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825 pcs
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825 pcs | On Request | 1 | On Request | On Request | 1812+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Microchip Technology TP2502N8-G is a P-Channel MOSFET designed for various electronic applications. It offers a drain-source voltage (Vdss) of 20V and a continuous drain current of 630mA at Tj. The MOSFET features a low on-resistance of 2 Ohm at 1A and 10V, with a gate threshold voltage (Vgs(th)) of 2.4V at 1mA.
This device operates within a temperature range of -55°C to 150°C (TJ). Its input capacitance (Ciss) is a maximum of 125 pF at 20V. The maximum gate-source voltage (Vgs) is ±20V. The MOSFET has a maximum power dissipation of 1.6W (Ta).
The TP2502N8-G is packaged in a TO-243AA (SOT-89) package, suitable for surface mounting. Its technology is MOSFET (Metal Oxide).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 20V.
The continuous drain current is 630mA at Tj.
The operating temperature range is -55°C to 150°C (TJ).
The TP2502N8-G is supplied in a TO-243AA package.
The TP2502N8-G is a surface mount device.