TP2502N8-G The Microchip Technology TP2502N8-G is a P-Channel MOSFET with a 20V drain-source voltage and 630mA continuous drain current. It is supplied in a TO-243AA package for surface mounting.
Mfr Part #:

TP2502N8-G

Available from 1 distributors
Mfr Name: Microchip Technology
Microchip Technology
The Microchip Technology TP2502N8-G is a P-Channel MOSFET with a 20V drain-source voltage and 630mA continuous drain current. It is supplied in a TO-243AA package for surface mounting.
✓ Total Stock: 825 pcs
$ Price Range: $2.56

TP2502N8-G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
825 pcs
825 pcs On Request 1 On Request On Request 1812+ On Request On Request

TP2502N8-G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

TP2502N8-G Description

Short technical summary and product information.

The Microchip Technology TP2502N8-G is a P-Channel MOSFET designed for various electronic applications. It offers a drain-source voltage (Vdss) of 20V and a continuous drain current of 630mA at Tj. The MOSFET features a low on-resistance of 2 Ohm at 1A and 10V, with a gate threshold voltage (Vgs(th)) of 2.4V at 1mA.

 

This device operates within a temperature range of -55°C to 150°C (TJ). Its input capacitance (Ciss) is a maximum of 125 pF at 20V. The maximum gate-source voltage (Vgs) is ±20V. The MOSFET has a maximum power dissipation of 1.6W (Ta).

 

The TP2502N8-G is packaged in a TO-243AA (SOT-89) package, suitable for surface mounting. Its technology is MOSFET (Metal Oxide).

TP2502N8-G Quick Information

Product Type: MOSFET
Canonical Name: TP2502N8-G P-Channel MOSFET
Subcategory: Single

TP2502N8-G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TP2502N8-G Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

TP2502N8-G Features

  • P-Channel MOSFET with 20V Vdss.
  • Continuous drain current of 630mA.
  • Low on-resistance of 2 Ohm.
  • TO-243AA package for surface mounting.
  • Wide operating temperature range.

TP2502N8-G Applications

  • Suitable for power switching circuits.
  • Used in general purpose amplification.
  • Ideal for battery management systems.
  • Applicable in low-voltage logic circuits.

TP2502N8-G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the TP2502N8-G?

The drain-source voltage (Vdss) is 20V.

What is the continuous drain current for the TP2502N8-G?

The continuous drain current is 630mA at Tj.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the TP2502N8-G supplied in?

The TP2502N8-G is supplied in a TO-243AA package.

How is the TP2502N8-G mounted?

The TP2502N8-G is a surface mount device.

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