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149 pcs
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149 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Supertex TP2502N8 is a P-Channel MOSFET designed for various electronic applications. It features a drain-source breakdown voltage of 20V and can handle a continuous drain current of 630mA, with a power dissipation rating of 1.6W.
This MOSFET operates with a gate-source voltage of 20V and has a drain-source on-resistance of 2 Ohms. It exhibits electrical characteristics such as rise time of 11 ns and fall time of 11 ns, with typical turn-on delay time of 10 ns and typical turn-off delay time of 15 ns.
The device is specified for operation within a temperature range of -55C to +150C. Its mechanical dimensions include a height of 1.6mm, length of 4.6mm, and width of 2.6mm. The TP2502N8 is manufactured using Silicon technology and is configured as a single channel enhancement mode P-MOSFET.
Packaged in a SOT-89-3 surface-mount case, it is supplied on a reel with a factory pack quantity of 2000 units. The RoHS status is listed as RoHS3 Compliant, and the Moisture Sensitivity Level (MSL) is 1 Unlimited.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.92 | $1.92 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage of the TP2502N8 is 20V.
The continuous drain current for the TP2502N8 is 630mA.
The power dissipation of the TP2502N8 MOSFET is 1.6W.
The operating temperature range for the TP2502N8 is -55C to +150C.
The TP2502N8 is supplied in a SOT-89-3 surface-mount package.
The RoHS status of the TP2502N8 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the TP2502N8 is 1 Unlimited.