| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,000,000 pcs
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1000000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale TP0202K-T1-GE3 is a P-Channel MOSFET designed for general-purpose small signal applications. It features a maximum drain-to-source voltage (Vds) of 30V and a continuous drain current (Ids) of 385mA at 25°C ambient temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 1.4 Ohms at 500mA and 10V, an input capacitance (Ciss) of 31pF at 15V, and a gate charge (Qg) of 1nC at 10V. The gate-source voltage (Vgs) maximum is ±20V, with a gate threshold voltage (Vgs(th)) of 3V at 250µA.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It has a maximum power dissipation of 350mW (Ta). The component is packaged in a surface-mount SOT-23-3 (TO-236) case, making it suitable for compact electronic designs. The technology used is Metal Oxide Semiconductor Field-Effect Transistor (MOSFET).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 30V.
The continuous drain current is 385mA at 25°C ambient temperature.
The maximum on-resistance is 1.4 Ohms at 500mA and 10V.
The operating temperature range is -55°C to 150°C (TJ).
It is supplied in a SOT-23-3 (TO-236) surface mount package.