| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
278,154 pcs
|
278154 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,465 pcs
|
1465 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
328 pcs
|
328 pcs | On Request | 1 | On Request | On Request | 0822+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs(th) (Max) @ Id | |
| Voltage |
The Vishay Dale TP0101K-T1-E3 is a P-Channel MOSFET designed for various electronic applications. It features a drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 0.58A. The MOSFET has an on-resistance (Rds(on)) of 650mOhm at a gate-source voltage (Vgs) of 4.5V and a drain current of 580mA. Its threshold voltage (Vgs(th)) is typically 1V at 50µA.
This component utilizes MOSFET technology and is packaged in a SOT-23-3 (TO-236) case, suitable for surface mounting. The gate charge (Qg) is 2.2 nC at 4.5V.
The TP0101K-T1-E3 is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1. It is designed for applications requiring a P-Channel MOSFET with moderate voltage and current handling capabilities in a compact surface-mount form factor.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-20 V.
SOT-23-3 (TO-236, SC-59).
-0.58 A (at Ta).
650 mOhm maximum at 580 mA, 4.5 V.
1 V (typical) at 50 µA.
2.2 nC maximum at 4.5 V.
P-Channel MOSFET (Metal Oxide).