| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,929 pcs
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1929 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Microchip TN5325K1-G is an N-Channel MOSFET designed for power switching applications. It features a maximum drain-source voltage (Vds) of 650V and a maximum continuous drain current (Id) of 10.3A.
This MOSFET has a maximum power dissipation (Pd) of 140W and a typical forward voltage (Vf) of 1.8V. The operating temperature range is from -55°C to 150°C.
Packaged in a standard TO-92 through-hole configuration, the TN5325K1-G has 3 pins. Its channel mode is enhancement, and it has a maximum drain source resistance (Rds) of 8Ω.
This component is suitable for various electronic designs requiring reliable power management and switching capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.32 | $1.32 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the TN5325K1-G is 650 V.
The maximum continuous drain current (Id) for the TN5325K1-G is 10.3 A.
The maximum drain-source resistance (Rds) for the TN5325K1-G is 8 Ω.
The channel mode of the TN5325K1-G is Enhancement.
The maximum power dissipation (Pd) for the TN5325K1-G is 140 W.
The TN5325K1-G can operate from a minimum temperature of -55 °C to a maximum temperature of 150 °C.
The TN5325K1-G is supplied in a TO-92 package.
