| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,929 pcs
|
1929 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Forward Voltage | |
| SVHC Present |
This N-Channel MOSFET from Microchip, part number TN5325K1-G, is designed for electronic applications requiring a 650V maximum drain-source voltage and a 10.3A maximum continuous drain current. The device operates with an enhancement mode channel and has a typical forward voltage of 1.8V.
Featuring a TO-92 package and through-hole mounting, this MOSFET is suitable for circuits where space is a consideration but robust performance is needed. It offers a maximum power dissipation of 140W and can operate within a wide temperature range from -55°C to 150°C. The maximum drain-source resistance is specified at 8Ω.
This component is identified by its manufacturer part number TN5325K1-G and RS Stock No. 239-5618. It is part of the TN5325 series and is a type N MOSFET.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.32 | $1.32 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current is 10.3A.
The maximum drain-source voltage is 650V.
The operating temperature range is from -55°C to 150°C.
It uses a TO-92 package.
The RoHS status is RoHS3 Compliant.