| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
700 pcs
|
700 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Microchip Technology TN2540N3-G is a single N-Channel MOSFET designed for various electronic applications. It features a high drain-to-source voltage (Vdss) of 400V and a continuous drain current (Id) of 175mA at Tj.
This MOSFET utilizes Metal Oxide Semiconductor (MOS) technology. It has a gate-to-source voltage (Vgs) range of ±20V and a gate threshold voltage (Vgs(th)) of 2V at 1mA. The on-resistance (Rds On) is a maximum of 12 Ohms at 500mA and 10V gate drive. The maximum power dissipation is 1W (Ta).
Designed for through-hole mounting, the TN2540N3-G comes in a TO-226-3, TO-92-3 (TO-226AA) package. Its operating temperature range is from -55°C to 150°C (TJ).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
400V.
TO-226-3, TO-92-3 (TO-226AA) through-hole package.
-55°C to 150°C junction temperature.
2V at Id=1mA.
12 Ohms at Id=500mA and Vgs=10V.
125pF at Vds=25V.
4.5V and 10V.