| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
40,000 pcs
|
40000 pcs | On Request | 1 | On Request | On Request | 19+ROHS | On Request | On Request | |
|
75 pcs
|
75 pcs | On Request | 1 | On Request | On Request | MOUSER | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Tape & Reel |
The Supertex TN2106K1G is a low threshold, enhancement-mode N-Channel Vertical DMOS FET. It utilizes a vertical DMOS structure and a silicon-gate manufacturing process, offering the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. This transistor is free from thermal runaway and thermally-induced secondary breakdown.
Key electrical characteristics include a drain-to-source breakdown voltage (BVDSS) of 60V, a maximum on-resistance (RDS(ON)) of 2.5Ω, and a gate threshold voltage (VGS(th)) of up to 2.0V. The device operates over a temperature range of -55°C to +150°C.
Applications for the TN2106K1G include logic level interfaces ideal for TTL and CMOS, solid-state relays, battery-operated systems, photovoltaic drives, analog switches, general-purpose line drivers, and telecom switches. It is available in both TO-236AB (SOT-23) and TO-92 package types, with standard package quantities of 3000 for TO-236AB (SOT-23) on reel and 1000 or 2000 for TO-92 in bags or on reel respectively.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source breakdown voltage (BVDSS) is 60V.
The maximum on-resistance (RDS(ON)) is 2.5Ω.
The gate threshold voltage (VGS(th)) has a maximum value of 2.0V.
The operating and storage temperature range is -55°C to +150°C.
The TN2106K1G is available in TO-236AB (SOT-23) and TO-92 packages.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
