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TN2106K1-G The Microchip Technology TN2106K1-G is an N-Channel MOSFET designed for 60V operation with a continuous drain current of 280mA. It is available in a surface mount TO-236AB (SOT23) package.
Mfr Part #:

TN2106K1-G

Available from 1 distributors
Mfr Name: Microchip Technology
Microchip Technology
The Microchip Technology TN2106K1-G is an N-Channel MOSFET designed for 60V operation with a continuous drain current of 280mA. It is available in a surface mount TO-236AB (SOT23) package.
✓ Total Stock: 4,000 pcs
$ Price Range: $2.56

TN2106K1-G Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
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4,000 pcs
On Request
4000 pcs On Request 1 On Request On Request On Request On Request On Request
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TN2106K1-G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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TN2106K1-G Description

Short technical summary and product information.

The Microchip Technology TN2106K1-G is a single N-Channel MOSFET featuring a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 280mA at Tj. It offers a maximum on-resistance (Rds On) of 2.5 Ohms at 500mA and 10V gate drive.

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 360mW (Tc). The input capacitance (Ciss) is 50pF at 25V, and the gate threshold voltage (Vgs(th)) is 2V at 1mA. The gate-source voltage (Vgs) maximum is ±20V.

 

Packaged in a TO-236AB (SOT23) surface mount configuration, the TN2106K1-G is suitable for various electronic applications requiring a compact and reliable MOSFET. Its specifications make it a versatile component for switching and amplification circuits.

TN2106K1-G Quick Information

Product Type: MOSFET
Canonical Name: Microchip Technology TN2106K1-G N-Channel MOSFET
Subcategory: N-Channel

TN2106K1-G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TN2106K1-G Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

TN2106K1-G Features

  • 60V drain-to-source voltage rating.
  • 280mA continuous drain current.
  • 2.5 Ohm maximum on-resistance.
  • Surface mount TO-236AB (SOT23) package.
  • -55°C to 150°C operating temperature range.

TN2106K1-G Applications

  • Suitable for general switching applications.
  • Used in low-power electronic circuits.
  • Ideal for compact designs.
  • Component for power management.

TN2106K1-G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the TN2106K1-G?

The maximum drain-to-source voltage (Vdss) for the TN2106K1-G is 60V.

What is the continuous drain current of the TN2106K1-G?

The continuous drain current (Id) for the TN2106K1-G is 280mA at Tj.

What is the maximum on-resistance for the TN2106K1-G?

The maximum on-resistance (Rds On) for the TN2106K1-G is 2.5 Ohms when measured at 500mA and 10V gate drive.

What is the operating temperature range for this MOSFET?

The TN2106K1-G MOSFET operates within a temperature range of -55°C to 150°C (TJ).

What package type is the TN2106K1-G available in?

The TN2106K1-G is available in a TO-236AB (SOT23) package, which is a surface mount type.

Is the TN2106K1-G RoHS compliant?

Yes, the TN2106K1-G is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the TN2106K1-G?

The Moisture Sensitivity Level (MSL) for the TN2106K1-G is 1 Unlimited.

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