Mfr Part #:

TN0610N3-G

Mfr Name: Supertex

The Supertex TN0610N3-G is an N-Channel enhancement-mode MOSFET designed for various switching and amplifying applications. It offers a 100V drain-source breakdown voltage and a low threshold voltage.

✓ Total Stock: 4,530 pcs

TN0610N3-G Available from 1 distributor

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✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	4,530 pcs On Request	4530 pcs	On Request	1	On Request	On Request	07+	On Request	On Request

TN0610N3-G Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Supertex
Lead Style	Through-Hole
Mounting Style	Through Hole
Package / Case	TO-92
Power Dissipation	1 W

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TN0610N3-G Description

Short technical summary and product information.

The TN0610N3-G from Supertex is an N-Channel enhancement-mode Vertical DMOS FET. It is designed with a low threshold voltage of 2.0V maximum, making it suitable for logic-level interfaces with TTL and CMOS devices.

Key electrical characteristics include a drain-to-source breakdown voltage (BVDSS) of 100V and a maximum on-state resistance (RDS(ON)) of 15Ω at a gate-source voltage of 3.0V and drain current of 250mA. It also features a typical on-state resistance of 1.5Ω at VGS = 5.0V and ID = 3.0A. The device operates within a temperature range of -55°C to +150°C.

This MOSFET utilizes a vertical DMOS structure and a silicon-gate manufacturing process, providing the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient inherent in MOS devices. It is free from thermal runaway and thermally-induced secondary breakdown.

Applications include logic level interfaces, solid-state relays, battery-operated systems, photovoltaic drives, analog switches, general purpose line drivers, and telecom switches. The TN0610N3-G is supplied in a TO-92 package suitable for through-hole mounting.

TN0610N3-G Quick Information

Product Type: MOSFET

Canonical Name: TN0610N3-G N-Channel Enhancement-Mode Vertical DMOS FET

Subcategory: N-Channel MOSFET

TN0610N3-G Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

TN0610N3-G Features

Low threshold voltage of 2.0V maximum.
100V drain-to-source breakdown voltage.
Low on-resistance, 1.5Ω typical.
TO-92 package for through-hole mounting.
Suitable for TTL and CMOS logic interfaces.

TN0610N3-G Applications

Ideal for logic level interfaces.
Used in solid state relays.
Suitable for battery operated systems.
Applicable for photovoltaic drives.
General purpose line drivers.

TN0610N3-G FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source breakdown voltage of the TN0610N3-G?

The drain-source breakdown voltage is 100V minimum at VGS = 0V and ID = 1.0mA.

What is the continuous drain current rating?

The continuous drain current is 500mA maximum.

What is the on-resistance of the TN0610N3-G?

The static drain-to-source on-state resistance is 1.5Ω typical at VGS = 5V and ID = 3.0A, with a maximum of 15Ω at VGS = 3.0V and ID = 250mA.

What is the gate threshold voltage?

The gate threshold voltage is 2.0V maximum at VGS = VDS and ID = 1.0mA.

What is the operating temperature range?

The operating and storage temperature range is -55°C to +150°C.

What package does the TN0610N3-G come in?

The device is packaged in a through-hole TO-92 package.

What are the switching times?

Typical turn-on delay time is 6ns and typical turn-off delay time is 16ns.