| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,500 pcs
|
6500 pcs | On Request | 1 | On Request | On Request | 08+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Spacing | |
| Lead Style | |
| Mounting Style | |
| Number of Channels | |
| Package / Case | |
| Power Dissipation | |
| SVHC Present | |
| Technology |
The TN0610N3 from Supertex is a single N-Channel MOSFET designed for general-purpose switching applications. It offers a drain-source breakdown voltage of 100V and a continuous drain current capability of 0.5A. The MOSFET has a typical on-resistance of 1.5 Ohms, making it suitable for moderate power applications.
This device operates within a temperature range of -55C to +150C and dissipates up to 1W of power. It features a gate-source voltage rating of 20V. The TN0610N3 is constructed using Silicon technology and has a channel mode of enhancement.
Packaged in a standard TO-92 through-hole package, the TN0610N3 is designed for easy integration into circuit boards. It is supplied in bulk packaging. The typical turn-on delay time is 6 ns, and the typical turn-off delay time is 16 ns.
The minimum drain-source breakdown voltage is 100V.
The typical continuous drain current is 0.5A.
The typical drain-source on-resistance is 1.5 Ohms.
The TN0610N3 is packaged in a TO-92 through-hole package.
The operating temperature range is from -55C to +150C.
The TN0610N3 is an N-Channel MOSFET.
The maximum power dissipation is 1W.