Mfr Part #:

TN0200K-T1-E3

Mfr Name: Vishay

The Vishay Dale TN0200K-T1-E3 is an N-Channel MOSFET with a 20V drain-source voltage rating. It is supplied in a SOT-23-3 package.

✓ Total Stock: 49,878 pcs

$ Price Range: $2.56

TN0200K-T1-E3 Available from 4 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	40,000 pcs On Request	40000 pcs	On Request	1	On Request	On Request	18+	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	5,050 pcs On Request	5050 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Rayichip ✓ Non-Authorised Inventory information	4,773 pcs On Request	4773 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Speed Components Ltd ✓ Non-Authorised Inventory information	55 pcs On Request	55 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

TN0200K-T1-E3 Description

Short technical summary and product information.

The Vishay Dale TN0200K-T1-E3 is a single N-Channel MOSFET designed for various electronic applications. It features a maximum drain-to-source voltage (Vdss) of 20V and a continuous drain current of 730mA at ambient temperature.

The MOSFET has a maximum on-resistance (Rds On) of 400mOhm at 600mA drain current and 4.5V gate-source voltage. The gate threshold voltage (Vgs(th)) is a maximum of 1V at 50µA, and the gate charge (Qg) is 2nC at 4.5V.

This component utilizes MOSFET (Metal Oxide) technology and is packaged in a TO-236-3, SC-59, or SOT-23-3 configuration. It is designed for surface mount applications.

The TN0200K-T1-E3 is RoHS3 compliant, has an MSL of 1, and is REACH unaffected. Its compact SOT-23-3 package makes it suitable for space-constrained designs.

TN0200K-T1-E3 Quick Information

Product Type: MOSFET

Canonical Name: Vishay Dale TN0200K-T1-E3 N-Channel MOSFET

Subcategory: Single

TN0200K-T1-E3 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

TN0200K-T1-E3 Estimated Pricing

Qty	Low	High
1+	$2.56	$2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

TN0200K-T1-E3 Features

N-Channel MOSFET with 20V drain-source voltage.
Continuous drain current of 730mA.
Maximum on-resistance of 400mOhm.
Compact SOT-23-3 surface mount package.
RoHS3 compliant and MSL 1 rated.

TN0200K-T1-E3 Applications

Suitable for low-voltage switching circuits.
Ideal for power management applications.
Used in compact electronic devices.
General purpose discrete switching.

TN0200K-T1-E3 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum drain-to-source voltage for the TN0200K-T1-E3?

The maximum drain-to-source voltage (Vdss) is 20V.

What is the continuous drain current rating?

The continuous drain current is 730mA at ambient temperature.

What is the maximum on-resistance?

The maximum on-resistance (Rds On) is 400mOhm when measured at 600mA drain current and 4.5V gate-source voltage.

What package type is the TN0200K-T1-E3 supplied in?

It is supplied in a SOT-23-3 package, also known as TO-236-3 or SC-59.

Is the TN0200K-T1-E3 RoHS compliant?

Yes, it is RoHS3 compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level (MSL) is 1.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Vishay
Current	730mA (Ta)
Drain to Source Voltage (Vdss)	20 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	2 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	400mOhm @ 600mA, 4.5V
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1V @ 50µA