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TN0110N3-G The Supertex TN0110N3-G is an N-Channel MOSFET designed for electronic applications. It features a 100V drain-source breakdown voltage and a continuous drain current of 350mA.
Mfr Part #:

TN0110N3-G

Available from 2 distributors
Mfr Name: Supertex
Supertex
The Supertex TN0110N3-G is an N-Channel MOSFET designed for electronic applications. It features a 100V drain-source breakdown voltage and a continuous drain current of 350mA.
✓ Total Stock: 146 pcs
$ Price Range: $2.60

TN0110N3-G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Bristol Electronics ✓
Non-Authorised Inventory information
86 pcs
On Request
86 pcs On Request 1 On Request On Request On Request On Request On Request
Partservice ✓
Non-Authorised Inventory information
60 pcs
On Request
60 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

TN0110N3-G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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TN0110N3-G Description

Short technical summary and product information.

The TN0110N3-G from Supertex is a single N-Channel MOSFET belonging to the enhancement mode category. It is designed for through-hole mounting in a TO-92-3 package.

 

Key electrical specifications include a drain-source breakdown voltage of 100V and a continuous drain current of 350mA. The on-resistance (Rds On) is rated at 4.5 Ohms. The gate-source voltage (Vgs) is 20V. Switching characteristics are defined by a rise time of 3 ns, fall time of 3 ns, typical turn-on delay of 2 ns, and typical turn-off delay of 6 ns.

 

Thermal performance is supported by a power dissipation rating of 1W, with an operating temperature range from -55C to +150C. The device is constructed using Silicon (Si) technology.

 

This MOSFET is suitable for various electronic circuits requiring efficient switching and amplification. Its through-hole mounting style and TO-92-3 package make it convenient for breadboarding and through-hole PCB assembly.

TN0110N3-G Quick Information

Product Type: MOSFET
Canonical Name: Microchip TN0110N3-G N-Channel Enhancement Mode MOSFET
Subcategory: N-Channel MOSFET

TN0110N3-G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TN0110N3-G Estimated Pricing

Qty Low High
1+ $2.60 $2.60

Estimated market price range - modelled values for guidance only, not live distributor offers.

TN0110N3-G Features

  • N-Channel enhancement mode MOSFET.
  • 100V drain-source breakdown voltage.
  • 350mA continuous drain current.
  • 4.5 Ohm drain-source on-resistance.
  • TO-92-3 through-hole package.

TN0110N3-G Applications

  • Suitable for general switching applications.
  • Ideal for signal amplification circuits.
  • Used in power management designs.
  • Component for discrete semiconductor circuits.

TN0110N3-G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the TN0110N3-G?

100 V.

What is the continuous drain current rating?

350 mA.

What is the on-resistance of this MOSFET?

4.5 Ohms.

What is the operating temperature range?

-55°C to +150°C.

What package does the TN0110N3-G come in?

TO-92-3 through-hole package.

What are the switching times?

Typical rise and fall times are 3 ns, turn-on delay 2 ns, turn-off delay 6 ns.

What is the maximum power dissipation?

1 W.

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