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TN0110N3 The Supertex TN0110N3 is an N-Channel enhancement-mode MOSFET with a 100V breakdown voltage. It features a low threshold voltage and is available in a TO-92 package.
Mfr Part #:

TN0110N3

Available from 2 distributors
Mfr Name: Supertex
Supertex
The Supertex TN0110N3 is an N-Channel enhancement-mode MOSFET with a 100V breakdown voltage. It features a low threshold voltage and is available in a TO-92 package.
✓ Total Stock: 2,660 pcs
$ Price Range: $2.27

TN0110N3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
2,600 pcs
On Request
2600 pcs On Request 1 On Request On Request 08+ On Request On Request
Partservice ✓
Non-Authorised Inventory information
60 pcs
On Request
60 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

TN0110N3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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TN0110N3 Description

Short technical summary and product information.

The Supertex TN0110N3 is an N-Channel enhancement-mode vertical DMOS FET designed for switching and amplifying applications. It utilizes a low threshold voltage of 2.0V maximum, making it suitable for logic level interfaces, particularly with TTL and CMOS.

 

Key electrical specifications include a 100V drain-to-source breakdown voltage and a low on-resistance. The device offers high input impedance and fast switching speeds, characteristic of MOS devices, and is free from thermal runaway.

 

This MOSFET is housed in a TO-92 package, suitable for through-hole mounting. Its features make it ideal for applications such as solid-state relays, battery-operated systems, analog switches, and general-purpose line drivers.

TN0110N3 Quick Information

Product Type: MOSFET
Canonical Name: TN0110N3 N-Channel Enhancement-Mode Vertical DMOS FET
Subcategory: N-Channel Enhancement-Mode

TN0110N3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TN0110N3 Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

TN0110N3 Features

  • N-Channel enhancement-mode MOSFET
  • 100V drain-source breakdown voltage
  • Low 2.0V maximum threshold voltage
  • TO-92 through-hole package
  • Fast switching speeds

TN0110N3 Applications

  • Ideal for logic level interfaces
  • Suitable for solid-state relays
  • Used in battery-operated systems
  • Applicable for analog switches
  • General purpose line drivers

TN0110N3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the TN0110N3?

The drain-to-source breakdown voltage (BVDSS) for the TN0110N3 is 100V.

What is the gate threshold voltage for the TN0110N3?

The gate threshold voltage (VGS(th)) for the TN0110N3 is a maximum of 2.0V.

What is the maximum continuous drain current for the TN0110N3?

The maximum continuous drain current for the TN0110N3 is 0.5A at 25°C.

What is the on-resistance of the TN0110N3?

The on-resistance (RDS(ON)) is a maximum of 4.5 Ohms at VGS = 4.5V, ID = 250mA.

What is the operating temperature range for the TN0110N3?

The operating and storage temperature range is -55°C to +150°C.

What package type is the TN0110N3 available in?

The TN0110N3 is available in a TO-92 package.

Is the TN0110N3 RoHS compliant?

The RoHS status is listed as RoHS3 Compliant.

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