Mfr Part #:

TN0106N3-G

Mfr Name: Supertex

The Supertex TN0106N3-G is an N-Channel enhancement-mode MOSFET featuring a low threshold voltage and fast switching speeds. It is suitable for various logic-level interface applications.

✓ Total Stock: 379 pcs

TN0106N3-G Available from 1 distributor

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✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	379 pcs On Request	379 pcs	On Request	1	On Request	On Request	07+/01+	On Request	On Request

TN0106N3-G Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Supertex
Input Capacitance	50pF
Mounting Type	Through Hole
Package / Case	TO-92
Power Dissipation	1W
Termination Style	Through-Hole

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TN0106N3-G Description

Short technical summary and product information.

The Supertex TN0106N3-G is an N-Channel, enhancement-mode, vertical DMOS FET designed for a wide range of switching and amplifying applications. It offers a low threshold voltage of 2.0V maximum, high input impedance, and low input capacitance of 50pF typical.

Key electrical characteristics include a breakdown voltage (BVDSS) of 60V, a maximum on-resistance (RDS(ON)) of 3Ω, and a continuous drain current (ID(ON)) of 0.35A. The device operates within a temperature range of -55°C to +150°C and has a maximum power dissipation of 1W.

This MOSFET is free from secondary breakdown and thermal runaway, making it reliable for battery-operated systems, logic-level interfaces ideal for TTL and CMOS, solid-state relays, and general-purpose line drivers. The TN0106N3-G is supplied in a TO-92 package suitable for through-hole mounting.

Its design leverages Supertex's silicon-gate manufacturing process, providing the power handling capabilities of bipolar transistors with the advantages of MOS devices. The low input and output leakage further enhance its utility in sensitive electronic circuits.

TN0106N3-G Quick Information

Product Type: N-Channel MOSFET

Series: TN0106

Canonical Name: Supertex TN0106N3-G N-Channel Enhancement Mode Vertical DMOS FET

Subcategory: N-Channel

TN0106N3-G Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

TN0106N3-G Features

Low threshold voltage of 2.0V maximum.
High input impedance and low input capacitance.
Fast switching speeds and low on-resistance.
Free from secondary breakdown and thermal runaway.
TO-92 package for through-hole mounting.

TN0106N3-G Applications

Ideal for TTL and CMOS logic interfaces.
Suitable for solid-state relays.
Designed for battery-operated systems.
Used in photo voltaic drives.
Applicable for analog switches.

TN0106N3-G FAQs

6 frequently asked questions generated from this part’s specifications.

What is the drain-source breakdown voltage of the TN0106N3-G?

The minimum breakdown voltage is 60V.

What is the package type of the TN0106N3-G?

It is housed in a TO-92 package.

What is the operating temperature range of the TN0106N3-G?

The operating temperature range is -55°C to 150°C.

What is the maximum on-resistance?

The maximum on-resistance is 3Ω.

What is the maximum continuous drain current?

The maximum continuous drain current is 0.35A.

What is the maximum power dissipation?

The maximum power dissipation is 1W.