Mfr Part #:

TN0106N3

Mfr Name: Supertex

The Supertex TN0110N3 is an N-Channel Enhancement-Mode Vertical DMOS FET. It offers a 60V breakdown voltage and a low 2.0V maximum gate threshold voltage.

✓ Total Stock: 4,725 pcs

$ Price Range: $2.02

TN0106N3 Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	4,700 pcs On Request	4700 pcs	On Request	1	On Request	On Request	08+	On Request	On Request
Partservice ✓ Non-Authorised Inventory information	25 pcs On Request	25 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

TN0106N3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Supertex
Input Capacitance	50pF
Mounting Type	Through Hole
Storage Temperature	°C ~ °C
Tape & Reel	No

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TN0106N3 Description

Short technical summary and product information.

The Supertex TN0110N3 is an N-Channel Enhancement-Mode Vertical DMOS FET designed for switching and amplifying applications. It utilizes a vertical DMOS structure and silicon-gate manufacturing process, providing the power handling of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices.

Key electrical characteristics include a 60V breakdown voltage (BVDSS) and a low maximum gate threshold voltage (VGS(th)) of 2.0V. It features a continuous drain current (ID) of 0.5A at 25°C and a pulsed drain current of 2.0A. The ON-resistance (RDS(ON)) is a maximum of 3.0Ω at VGS = 10V and ID = 500mA. Input capacitance (CISS) is typically 50pF, contributing to fast switching speeds.

This device is free from thermal runaway and thermally-induced secondary breakdown. Its low threshold voltage makes it ideal for logic-level interfaces, particularly with TTL and CMOS logic. Other applications include solid-state relays, battery-operated systems, and analog switches.

The TN0110N3 comes in a TO-92 package with through-hole mounting. It operates within a temperature range of -55°C to +150°C.

TN0106N3 Quick Information

Product Type: N-Channel Enhancement-Mode Vertical DMOS FET

Canonical Name: TN0110N3 N-Channel Enhancement-Mode Vertical DMOS FET

Subcategory: N-Channel Enhancement-Mode

TN0106N3 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

TN0106N3 Estimated Pricing

Qty	Low	High
1+	$2.02	$2.02

Estimated market price range - modelled values for guidance only, not live distributor offers.

TN0106N3 Features

Low threshold voltage of 2.0V maximum.
High input impedance and low input capacitance.
Fast switching speeds and low on resistance.
Free from thermal runaway and secondary breakdown.
TO-92 package for through-hole mounting.

TN0106N3 Applications

Ideal for logic level interfaces.
Suitable for solid state relays.
Used in battery operated systems.
Applicable for analog switches.
General purpose line drivers.

TN0106N3 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the breakdown voltage of the TN0110N3?

The breakdown voltage (BVDSS) of the TN0110N3 is 60V.

What is the maximum gate threshold voltage for the TN0110N3?

The maximum gate threshold voltage (VGS(th)) for the TN0110N3 is 2.0V.

What is the continuous drain current rating for the TN0110N3?

The continuous drain current (ID) for the TN0110N3 is 0.5A at 25°C.

What is the maximum ON-resistance of the TN0110N3?

The maximum ON-resistance (RDS(ON)) of the TN0110N3 is 3.0Ω.

What package type is the TN0110N3 available in?

The TN0110N3 is available in a TO-92 package.

What is the operating temperature range for the TN0110N3?

The operating temperature range for the TN0110N3 is -55°C to +150°C.