| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,100 pcs
|
2100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET from Microchip Technology, part number TN0104N8-G, is designed for various electronic applications. It features a maximum drain-to-source voltage (Vdss) of 40V and can handle a continuous drain current of 630mA. The on-resistance (Rds On) is a maximum of 2 Ohms at 1A and 10V gate-source voltage.
The device operates within a temperature range of -55°C to 150°C (TJ). It has a gate-to-source voltage (Vgs) limit of ±20V and a gate threshold voltage (Vgs(th)) of 1.6V at 500µA. The input capacitance (Ciss) is a maximum of 70 pF at 20V.
Packaged in a TO-243AA (SOT-89) surface-mount configuration, this MOSFET is suitable for space-constrained designs. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles. The maximum power dissipation is rated at 1.6W (Tc).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V
TO-243AA (SOT-89) surface mount
-55°C to 150°C junction temperature
±20V
70 pF at 20V drain-source voltage
MOSFET (Metal Oxide)