| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10,450 pcs
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10450 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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| SVHC Present |
The TRINNO TMU2N60Z is a Power MOSFET designed for various AC/DC and DC/DC applications. It features a maximum drain-source voltage of 600V and a continuous drain current of 2.5A at 25℃. The typical gate-source threshold voltage is 3V, with a maximum on-resistance of 5.1Ω and a typical on-resistance of 3Ω at 25℃.
This MOSFET utilizes Planar MOSFET technology, offering cost-effective, reliable, and robust solutions. It is suitable for applications such as adaptors, LED lighting, SMPS, and PFC. The super junction technology provides high efficiency and power density.
The TMU2N60Z is supplied in a TO-252 (DPAK) package, designed for surface mounting. Its electrical characteristics make it a suitable component for power conversion circuits requiring a high breakdown voltage and moderate current handling capability.
The maximum drain-source voltage (VDSS) for the TMU2N60Z is 600V.
The continuous drain current (ID) for the TMU2N60Z at 25℃ is 2.5A.
The typical gate threshold voltage (VGS(th)) for the TMU2N60Z is 3V.
The maximum on-resistance (RDS(on)) for the TMU2N60Z at 25℃ is 5.1Ω.
The TMU2N60Z is available in a TO-252 (DPAK) package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.