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7,060 pcs
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7060 pcs | On Request | 1 | On Request | On Request | 1426+ | On Request | On Request |
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The TRINNO TMU2N60AZ is a Power MOSFET designed for various applications. It offers a maximum drain-source voltage (Vds) of 600V and a continuous drain current (Id) of 2.5A at 25℃. The typical gate threshold voltage (Vgs(th)) is 3V, with a maximum on-resistance (Rds(on)) of 5.1Ω at 25℃ and a typical on-resistance of 3Ω.
This MOSFET is suitable for AC/DC and DC/DC applications, including adaptors, LED lighting, SMPS, and PFC. Its super junction technology provides high efficiency and power density. The component is housed in a TO-251(IPAK) package, suitable for surface mount applications.
TRINNO Technology Co., Ltd. positions this product as a cost-effective, reliable, and robust solution. The TMU2N60AZ is part of their Planar MOSFET technology offerings.
The maximum drain-source voltage (Vds) for the TMU2N60AZ is 600V.
The continuous drain current (Id) at 25℃ for the TMU2N60AZ is 2.5A.
The typical gate threshold voltage (Vgs(th)) for the TMU2N60AZ is 3V.
The maximum on-resistance (Rds(on)) at 25℃ for the TMU2N60AZ is 5.1Ω.
The TMU2N60AZ is supplied in a TO-251(IPAK) package.