| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
22 pcs
|
22 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Access Time | |
| Memory Type | |
| SVHC Present |
The Texas Instruments TMS4C1070B-30N is a high-speed Static Random-Access Memory (SRAM) device. It features a memory organization of 262144 words by 4 bits, providing a total storage capacity suitable for various data buffering and storage applications.
With an access time of 30 nanoseconds, this component ensures rapid data retrieval, making it efficient for performance-critical systems. The SRAM technology allows for immediate data access without the need for clock synchronization, simplifying system design.
This memory component is designed to meet industry standards for environmental compliance, indicated as RoHS3 Compliant. Its Moisture Sensitivity Level (MSL) is rated as Level 1, meaning it has unlimited shelf life under recommended conditions. The REACH status is unaffected.
Further details regarding operating voltage, package type, and mounting specifications would typically be found in the manufacturer's datasheet. This part is suitable for applications requiring fast, non-volatile data storage.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory organization is 262144 words by 4 bits.
The access time is 30 ns.
It is a SRAM memory.
Yes, it is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.