| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The Texas Instruments TMS4C1024-10SD is a Fast Page DRAM with a memory density of 1048576 bits and a 1Mx1 organization. It operates asynchronously with a maximum access time of 70 ns and a nominal supply voltage of 5V.
This component features RAS Only/CAS Before RAS/Hidden Refresh additional functions and Separate I/O type. The output characteristics are 3-State. It is housed in a ZIP-20 through-hole package with a plastic/epoxy body material and Tin/Lead terminal finish.
The operating temperature range is up to 70°C. The part has a standby current maximum of 0.001 A and a supply current maximum of 0.065 mA. It is designed for commercial temperature grade applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum access time for the TMS4C1024-10SD is 70 ns.
The nominal supply voltage for the TMS4C1024-10SD is 5V, with a minimum of 4.5V and a maximum of 5.5V.
The TMS4C1024-10SD is a Fast Page DRAM.
The TMS4C1024-10SD is available in a ZIP-20 through-hole package.
The operating temperature for this DRAM is up to 70°C.