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298 pcs
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298 pcs | On Request | 1 | On Request | On Request | 9806+ | On Request | On Request |
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The Texas Instruments TMS4416-10NL is a Dynamic Random Access Memory (DRAM) integrated circuit. It features a memory organization of 16,384 words by 4 bits, providing a total capacity suitable for various memory applications. This component is housed in a DIP package, indicating through-hole mounting.
Designed for reliability, the TMS4416-10NL is specified as RoHS3 Compliant, aligning with environmental regulations. The Moisture Sensitivity Level (MSL) is rated at 1, meaning it has unlimited shelf life under recommended conditions. REACH status is marked as Unaffected. This DRAM chip is a component often sought after for retro computing projects and embedded systems requiring specific memory configurations.
Its through-hole package facilitates easier prototyping and assembly on breadboards or through-hole PCBs. The 16K x 4 configuration makes it a specific choice for systems designed around this particular memory architecture.
The TMS4416-10NL DRAM chip has an organization of 16,384 words by 4 bits.
The TMS4416-10NL is a Dynamic RAM (DRAM) chip.
The TMS4416-10NL DRAM chip is supplied in a DIP package.