| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,040 pcs
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1040 pcs | On Request | 1 | On Request | On Request | 15+PB | On Request | On Request |
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The TRINNO TMPF2N60AZ is an N-Channel Power MOSFET from TRINNO Technology Co., Ltd., a leader in power semiconductor technology. This MOSFET utilizes Planar MOSFET technology, offering cost-effective, reliable, and robust solutions for AC/DC and DC/DC applications such as adaptors, LED lighting, SMPS, and PFC.
Key electrical specifications include a Drain-Source Breakdown Voltage (VDSS) of 600V, a continuous Drain Current (ID) of 2.5A at 25℃, a typical Gate-Source Threshold Voltage (VGS(th)) of 3V, and a maximum On-Resistance (RDS(on)) of 5.1Ω at 25℃. The typical On-Resistance is 3Ω, and the typical Gate Charge (Qg) is 10nC.
This component is housed in a TO-220F package, suitable for through-hole mounting. TRINNO's super junction MOSFET offerings provide high efficiency and power density solutions, making the TMPF2N60AZ a suitable choice for various power conversion designs.
The Drain-Source Breakdown Voltage (VDSS) for the TMPF2N60AZ is 600V.
The continuous drain current (ID) at 25℃ is 2.5A.
The typical on-resistance (RDS(on)) at 25℃ is 3Ω.
The TMPF2N60AZ is available in a TO-220F package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.