| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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343 pcs
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343 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| Package / Case | |
| SVHC Present |
The TRINNO TMPF13N50G is an N-channel MOSFET belonging to the discrete semiconductor products category, specifically for single MOSFET applications. It is designed with a high drain-source voltage rating of 550V at Tjmax and can handle a continuous drain current of 13A. The on-resistance is specified as a maximum of 0.48 Ohms at a gate-source voltage of 10V.
This MOSFET is available in TO-220 and TO-220F package types, suitable for through-hole mounting. It boasts features such as low gate charge, 100% avalanche tested, and improved dv/dt capability, making it robust for demanding applications. The component is RoHS3 compliant and comes in a halogen-free package, aligning with environmental standards.
Key electrical characteristics include a maximum drain-source voltage of 550V and a continuous drain current of 13A. The on-resistance is 0.48 Ohms maximum. The device is qualified according to JEDEC standards. Its design considerations include low gate charge and improved dv/dt capability, suggesting suitability for switching applications where these parameters are critical.
The maximum drain-source voltage (VDSS) for the TMPF13N50G is 550V at Tjmax.
The continuous drain current (ID) for the TMPF13N50G is 13A.
The maximum on-resistance (RDS(on)) for the TMPF13N50G at VGS=10V is 0.48 Ohms.
The TMPF13N50G is available in TO-220 and TO-220F packages.
Yes, the TMPF13N50G is RoHS3 compliant.
The Moisture Sensitivity Level (MSL) for the TMPF13N50G is 1 Unlimited.
Yes, the TMPF13N50G comes in a halogen-free package.