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6,000 pcs
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6000 pcs | On Request | 1 | On Request | On Request | 1142+ | On Request | On Request |
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| SVHC Present |
TRINNO Technology offers the TMP13N50, an N-Channel Power MOSFET utilizing Planar MOSFET technology. This component is suitable for cost-effective, reliable, and robust solutions in AC/DC and DC/DC applications such as adaptors, LED lighting, SMPS, and PFC.
The TMP13N50 boasts a Drain-Source Breakdown Voltage of 900V and a Continuous Drain Current of 9.5A at 25℃. The typical Gate-Source Threshold Voltage is 3V, and the maximum Drain-Source On-Resistance at 25℃ is 1.4Ω. This MOSFET is available in several package configurations, including TO-220, TO-220F, TO-3PN, TO-252 (DPAK), and TO-251 (IPAK).
TRINNO's super junction MOSFET offerings provide high efficiency and power density solutions, making the TMP13N50 a strong candidate for power conversion applications requiring robust performance and thermal management. The device's polarity is N-channel.
The maximum breakdown voltage (VDSS) for the TRINNO TMP13N50 is 900V.
The continuous drain current (ID) for the TMP13N50 at 25℃ is 9.5A.
The typical gate-source threshold voltage (VGS(th)) for the TMP13N50 is 3V.
The maximum drain-source on-resistance (RDS(on)) at 25℃ is 1.4Ω.
The TMP13N50 is available in TO-220, TO-220F, TO-3PN, TO-252(DPAK), and TO-251(IPAK) packages.