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TMBT3906,LM The Toshiba TMBT3906LM is a PNP bipolar junction transistor designed for general-purpose applications. It offers a 50V collector-emitter voltage and 150mA collector current.
Mfr Part #:

TMBT3906,LM

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TMBT3906LM is a PNP bipolar junction transistor designed for general-purpose applications. It offers a 50V collector-emitter voltage and 150mA collector current.
✓ Total Stock: 7,860,870 pcs
$ Price Range: $0.51

TMBT3906,LM Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Romaks Technologies ✓
Non-Authorised Inventory information
7,860,870 pcs
On Request
7860870 pcs On Request 1 On Request On Request On Request On Request On Request
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TMBT3906,LM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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TMBT3906,LM Description

Short technical summary and product information.

The Toshiba TMBT3906LM is a single PNP bipolar junction transistor (BJT) housed in a compact SOT-23-3 surface-mount package. This device is rated for a maximum collector-emitter voltage of 50V and a continuous collector current of 150mA, with a maximum power dissipation of 320mW. It features a DC current gain (hFE) of at least 100 at 10mA collector current and 1V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 400mV at 5mA base current and 50mA collector current.

 

Operating at temperatures up to 150°C, the TMBT3906LM is suitable for various electronic circuits. Its SOT-23-3 package and surface-mount capability make it ideal for space-constrained designs. The transistor operates at frequencies up to 250MHz.

 

This component is designated as RoHS3 compliant. Its moisture sensitivity level is rated as MSL 1, indicating unlimited shelf life under standard conditions. The REACH status is unaffected.

TMBT3906,LM Quick Information

Product Type: Bipolar Junction Transistor
Canonical Name: Toshiba TMBT3906LM PNP Bipolar Junction Transistor
Subcategory: Single

TMBT3906,LM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TMBT3906,LM Estimated Pricing

Qty Low High
1+ $0.51 $0.51

Estimated market price range - modelled values for guidance only, not live distributor offers.

TMBT3906,LM Features

  • PNP bipolar junction transistor.
  • Rated for 50V collector-emitter voltage.
  • Handles up to 150mA collector current.
  • 320mW maximum power dissipation.
  • Surface mount SOT-23-3 package.

TMBT3906,LM Applications

  • General purpose switching applications.
  • Signal amplification circuits.
  • Low power electronic designs.
  • Space constrained PCB layouts.

TMBT3906,LM FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the TMBT3906LM?

The maximum collector-emitter voltage is 50V.

What is the maximum continuous collector current?

The maximum continuous collector current is 150mA.

What is the operating temperature range?

The operating temperature range is up to 150°C.

What package type is the TMBT3906LM supplied in?

It is supplied in a TO-236-3, SC-59, SOT-23-3 package.

Is the TMBT3906LM RoHS compliant?

Yes, it is RoHS3 compliant.

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