| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10,700 pcs
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10700 pcs | On Request | 1 | On Request | On Request | 1208+ | On Request | On Request | |
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200 pcs
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200 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba TLP421F is an optocoupler designed for signal transmission between different voltage circuits. It comprises a GaAs infrared emitting diode optically coupled to a silicon phototransistor, housed in a 4-lead plastic DIP package.
Key electrical specifications include a minimum isolation voltage of 5000 Vrms and a minimum collector-emitter voltage of 80V. The current transfer ratio is a minimum of 50%, with a Rank GB option offering a minimum of 100%. Mechanical ratings include a creepage distance and clearance of 8.0 mm (min) and an insulation thickness of 0.4 mm (min).
This component is suitable for applications such as office equipment, household appliances, solid-state relays, switching power supplies, and various controllers. The DIP4 package with a 10.16mm pitch facilitates through-hole mounting.
Compliance information indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are noted with low confidence due to lack of verification.
The TLP421F has a minimum isolation voltage of 5000 Vrms.
The minimum collector-emitter voltage for the TLP421F is 80V.
The minimum current transfer ratio is 50%, with a Rank GB option at 100% minimum.
The TLP421F is supplied in a DIP4 package.
The TLP421F is a through-hole mounted component.